Photodiodes

OSI Optoelectronics manufactures a wide variety of photodiodes. OSIO photodiode materials include Silicon (Si), Indium gallium arsenide (InGaAs), and Gallium Arsenide (GaAs). These photodiodes are offered in a plethora of sizes ranging from 36um to 2cm in size. There is also a large selection of photodiode configurations which are offered, ie bare die, photodiodes with lead wires, photodiodes in ceramic packaging for a greater field of view or photodiodes mounted in hermetically sealed “TO-Style” metal packages. In addition, OSI Optoelectronics offers photodiodes with receptacles (SC, FC, ST) as well as pigtailed photodiodes using single mode (SM) and multi-mode (MM) fiber.

Silicon Photodiodes
InGaAs Photodiodes
GaAs Photodiodes

Silicon Photodiodes

Silicon photodiodes are semiconductor devices used for the detection of light from the ultra-violet to the near-IR regions (200nm – 1100nm). OSI Optoelectronics has developed a wide variety of photodiodes which are suitable for many applications such as: Position Sensing, Power Monitoring, X-Ray & Gamma Detection, etc.. Ask us about our custom photodiode capabilities.

InGaAs Photodiodes

InGaAs photodiodes are semiconductor devices used for the detection of light in the NIR, (700nm – 1700nm wavelengths). OSI Optoelectronics has developed a wide variety of photodiodes which are suitable for a plethora of applications within this spectrum such as: Back Facet Detection, Power Monitoring, DWDM Components, OTDR Measurements, etc… Ask us about our custom photodiode capabilities.

GaAs Photodiodes

Our GaAs-based photodiodes with a 100μm active area and sensitivity range of 400 to 850nm are integrated with a wide dynamic range transimpedance amplifier.

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