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Application Notes

Take some time to look over our Application Notes Library. For further information please contact one our expert Application Engineers. AN02 Silicon Photodiodes Physics and Technology (648k)X-ray region.

• AN02 Silicon Photodiodes Physics and Technology (648k)
  A detailed discussion of selection and general use of photodiodes in various applications including low noise, high speed applications. Some examples of electronics designs are discussed.
• Photodiode Characteristics and Applications (680k)
  A detailed discussion of silicon photodiodes construction, operation and characteristics.
• Optical Communication Photodiodes and Receivers (976k)
  This application note helps to estimate optical front-end performance and to compare receivers’ parameters. In the real systems, Jitter, Intersymbol Interference and other phenomena can affect total system performance.
• AN07 Silicon Photodiode Device with 100% External Quantum Efficiency (672k)
  A discussion on the inversion layer type of silicon photodiode.

Photodiodes: Stability and Reliability

• AN17 Quantum Efficiency Stability of Silicon Photodiodes (764k)
  Our concern in this paper is with developing more satisfactory diodes for use as shelf standards, and the spectral region of interest to us are the UV and short-wavelength visible.
• AN18 Neutron Hardness of Photodiodes for Use In Passive Rubidium Frequency Standard (488k)
  The photodiode used for optical detection of the atomic resonance in a passive rubidium frequency standard (RFS) is a critical component that can limit the radiation hardness of the standard at high neutron-fluence levels.
• AN19 The Effect of Neutron Irradiation on Silicon Photodiodes (560k)
  In this paper the changes in the device parameters and characteristics of several types of photodiodes affter exposure to 1 MeV equivalent neutron having fluences in the range of 5x1011 to 1014 N/cm2 are reported.
• AN20 Stable High Quantum Efficiency, UV-enhanced Silicon Photodiodes by Arsenic Diffusion (340k)
  A new type of UV enhanced photodiode has been fabricated and tested. It was found to combine high UV quantun efficiency, linearity range and stability against exposure to intense UV irradiation.
• AN22 Stability and Quantum Efficiency Performance of Silicon Photodiode Detectors in the far Ultraviolet (328k)
  We report here the results of tests on the efficiency, stability, and spatial uniformity of a new class of Si photodiodes whose fabrication parameters have been optimized for the far ultraviolet and which appear attractive for radiometric applications.
• AN23 Silicon Photodiodes with Stable, Near-theoretical Quantum Efficiency in the Soft X-ray Region (432k)
  This paper describes the recently developed silicon photodiode detectors high quantum efficiency and stability in the vacuum UV and soft X-ray region.

Photodiodes: Position Sensing Detectors

• Position Sensing Detectors and Photodiodes, General Discussion (324k)
  Silicon photodetectors are commonly used for light power measurements in a wide range of applications such as bar-code readers, laser printers, medical imaging, spectroscopy and more. There is another function, however, which utilizes the photodetectors as optical position sensors. They, are widely referred to as Position Sensing Detectors or simply PSD’s. in one and two-dimensional configurations.
• Using Photodetectors for Position Sensing (380k)
  Electro-optical systems are increasingly used in position sensing and in dynamic measurements that require noncontact sensors with wide frequency bandwidth.
• AN08 Lateral-Effect Photodiodes (252k)
  Mechanical- Alignment applications of electro-optical instruments have expanded dramatically during the past three years in the construction, machine tool, aircraft and aerospace industries, increasing demands for new types of postition-sensing detectors.
• AN10 Practical Electro-optics Deflection Measurements System (252k)
  This paper describes an electro-optic displacement system which measures both angualr and lateral displacements simultaneously.
• AN12 Continuous position sensing series (LSC, SC) (232k)
  These series are sensitive, linear, and fast siliconphotodetectors that provide two electrical output signals, specifying the X only position(LSC Series) or X and Y position (Dual Axis SC Series) of an input right spot signal that is relativeto fixed internal coordinates.
• AN13 Non-contact Optical Position Sensing using Silicon Photodetectors (508k)
  The purpose of this paper is to examine the various types of silicon photodetectors, which may be used for position sensing.
• AN15 Real time Bio Mechanical Position Sensing Based on a Lateral Effect Photodiode (108k)
  The photodiode is a 1cm x 1cm device that is capable of sensing light imaged on its surface.
• Quadrant and Bi-cell Silicon Photodiode Amplifier Module (128k)
  OSI Optoelectronics "Laser-Effect" position sensors.

Photodiodes: Light Measurement

• AN04 Stability of Silicon Photodiodes for Laser Emission Measurements (448k)
  Our objective here is to examine the suitability of silicon photodiodes as the transducer, and to discuss the calibration accuracy, reproducibility and stability that are likely to be achieved from a commercial company.
• AN06 Radiometric and Photometric Concepts Based on Measurement Techniques (544k)
  Radiometric quantities will be discussed first followed by corresponding relationships and measurement units that have developed and are peculiar to photometry.