Broadband AR Coated Photodiodes
OSI Optoelectronics's latest product line includes a very low reflectance photodiode. Designed for telecommunication applications, the InGaAs/InP photodiode has a typical optical reflectance of less than .6% from 1520nm to 1620nm. This ultra low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered Anti-Reflection coating directly onto the surface of the InGaAs/InP photodiode.