Broadband AR Coated Photodiodes

OSI Optoelectronics's latest product line includes a very low reflectance photodiode. Designed for telecommunication applications, the InGaAs/InP photodiode has a typical optical reflectance of less than .6% from 1520nm to 1620nm. This ultra low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered Anti-Reflection coating directly onto the surface of the InGaAs/InP photodiode.

Image Datasheet Model Number Active Area Responsivity at 1310 nm Responsivity at 1550 nm Reflectance at 1550nm Dark Current Capacitance Package View
PDF FCI-InGaAs-WCER-LR 250 x 500 µm 0.85 A/W 0.90 A/W 0.5 % 1 nA 15 pF Wraparound Leadless Ceramic View

Product Quick Finder

We Respect Your Privacy

We use cookies to personalise content, to provide social media features, and to analyse our traffic. We also share information about your use of our site with our social media and analytics partners.

Cookies Policy

Reject
Accept