Broadband Anti-Reflective Coated InGaAs Photodiode
Electro-Optical Characteristics
OSI Optoelectronics latest product line includes a very low reflectance photodiode. Designed for telelcommunication applications, the InGaAs/InP photodiode has a typical optical reflectance of less than .6%a from 1520nm to 1620nm. This ultra low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered Anti-reflection coating directly onto the surface of the InGaAs/InP photodiode.