Broadband Anti-Reflective Coated InGaAs Photodiode

Electro-Optical Characteristics

OSI Optoelectronics latest product line includes a very low reflectance photodiode. Designed for telelcommunication applications, the InGaAs/InP photodiode has a typical optical reflectance of less than .6%a from 1520nm to 1620nm. This ultra low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered Anti-reflection coating directly onto the surface of the InGaAs/InP photodiode.

InGaAs Broadband AntiReflective Coated

Product Applications

  • Wavelength Locker / Wavelength Monitoring
  • Lasers Back Facet Monitoring
  • DWDM
  • Instrumentation

Product Features

  • Reflectance Less than 0.6%
  • Low Noise
  • High Responsivity
  • High Speed
  • Spectral Range 900nm to 1700nm

Electro-Optical Characteristics

Model Number Active Area Responsivity 1310nm Responsivity 1550nm Capacitance Dark Current Max Reverse Voltage Max Reverse Current MAx Forward Current Package Click Image to Zoom
FCI-InGaAs-WCER-LR --- 0.85 A/W 0.90 A/W 15 pF Vr=5.0V 1 nA Vr=5.0V 20 V 2 mA 5 mA --- No image found for (FCI-InGaAs-WCER-LR)