Standard Products > InGaAs Photodiodes > Photodiode Ceramic Assembly > High Speed InGaAs Photodiode on Ceramic Submount

High Speed InGaAs Photodiode on Ceramic Submount

Electro-Optical Characteristics

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FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metalized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.

Product Applications

High Speed Optical Communications
Gigabit Ethernet/Fiber Channel
SONET / SDH, ATM
Diode Laser Monitor
Instrumentation

Product Features

Low Noise
High Responsivity
High Speed
Spectral Range 900nm to 1700nm

Electro-Optical Characteristics

Model Number	Active Area Diameter	Responsivity 1310nm	Responsivity 1550nm	Dark Current	Capacitance	Rise Time	Reverse Voltage	Package
FCI-InGaAs-75WCER	75 µm	0.9 A/W	0.95 A/W	0.03 nA Vr=5.0V	0.65 pF Vr=5.0V	0.2 ns Vr=5.0V	---	FCI-InGaAs-XXX-WCER
FCI-InGaAs-120WCER	120 µm	0.9 A/W	0.95 A/W	0.05 nA Vr=5.0V	1 pF Vr=5.0V	0.3 ns Vr=5.0V	---	FCI-InGaAs-XXX-WCER
FCI-InGaAs-300WCER	300 µm	0.9 A/W	0.95 A/W	0.3 nA Vr=5.0V	10 pF Vr=5.0V	1.5 ns Vr=5.0V	---	FCI-InGaAs-XXX-WCER
FCI-InGaAs-400WCER	400 µm	0.9 A/W	0.95 A/W	0.4 nA Vr=5.0V	14 pF Vr=5.0V	3 ns Vr=5.0V	---	FCI-InGaAs-XXX-WCER
FCI-InGaAs-500WCER	500 µm	0.9 A/W	0.95 A/W	0.5 nA Vr=5.0V	20 pF Vr=5.0V	10 ns Vr=5.0V	---	FCI-InGaAs-XXX-WCER

Electro-Optical Characteristics

Model Number	Storage Temp	Operating Temp	Soldering Temp	Package
FCI-InGaAs-75WCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-WCER
FCI-InGaAs-120WCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-WCER
FCI-InGaAs-300WCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-WCER
FCI-InGaAs-400WCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-WCER
FCI-InGaAs-500WCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-WCER