Standard Products > InGaAs Photodiodes > Photodiode Ceramic Assembly > High Speed InGaAs Photodiode on Leaded Ceramic Package

High Speed InGaAs Photodiode on Leaded Ceramic Submount

Electro-Optical Characteristics

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FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate.

Product Applications

High Speed Optical Communications
Gigabit Ethernet/Fiber Channel
SONET / SDH, ATM
Diode Laser Monitor
Instrumentation

Product Features

Low Noise
High Responsivity
High Speed
Spectral Range 900nm to 1700nm

Electro-Optical Characteristics

Model Number	Active Area Diameter	Responsivity 1310nm	Responsivity 1550nm	Dark Current	Capacitance	Rise Time	Reverse Voltage	Package
FCI-InGaAs-75LCER	75 µm	0.9 A/W	0.95 A/W	0.03 nA Vr=5.0V	0.65 pF Vr=5.0V	0.2 ns Vr=5.0V	---	FCI-InGaAs-XXX-LCER
FCI-InGaAs-120LCER	120 µm	0.9 A/W	0.95 A/W	0.05 nA Vr=5.0V	1 pF Vr=5.0V	0.3 ns Vr=5.0V	---	FCI-InGaAs-XXX-LCER
FCI-InGaAs-300LCER	300 µm	0.9 A/W	0.95 A/W	0.3 nA Vr=5.0V	10 pF Vr=5.0V	1.5 ns Vr=5.0V	---	FCI-InGaAs-XXX-LCER
FCI-InGaAs-400LCER	400 µm	0.9 A/W	0.95 A/W	0.4 nA Vr=5.0V	14 pF Vr=5.0V	3 ns Vr=5.0V	---	FCI-InGaAs-XXX-LCER
FCI-InGaAs-500LCER	500 µm	0.9 A/W	0.95 A/W	0.5 nA Vr=5.0V	20 pF Vr=5.0V	10 ns Vr=5.0V	---	FCI-InGaAs-XXX-LCER

Electro-Optical Characteristics

Model Number	Storage Temp	Operating Temp	Soldering Temp	Package
FCI-InGaAs-75LCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-LCER
FCI-InGaAs-120LCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-LCER
FCI-InGaAs-300LCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-LCER
FCI-InGaAs-400LCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-LCER
FCI-InGaAs-500LCER	-40 to 85 °C	0 to 70 °C	260 °C	FCI-InGaAs-XXX-LCER