New Products

 

Silicon Annular Quadrant Backscatter Detectors

OSI Optoelectronics introduces its new ‘Annular Quadrant Backscatter Detectors ‘ available in TO-5 and TO-8 metal packages. Devices sensitive from 350nm to 1100nm. The 200um Laser drilled hole on the chap and the header make it ideal for coupling with LC ferrule.

For datasheet and technical questions please contact our Applications Group.

 

Back Illuminated SMT Photodiodes

The BI-SMT product series are single channel back-illuminated photodiodes specifically designed to minimize 'dead' areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a tiled format and offers ease of coupling to a scintillator. View Products & Descriptions

Silicon Avalanche Photodiodes

800nm Optimized Silicon Avalanche Photodiodes

OSI Optoelectronics introduces its new ‘800nm optimized Silicon APD Series’ available in hermetic metal packages. Devices offer lower noise and high sensitivity over bandwidths up to 1GHz. Devices exhibit low Temperature Coefficient 0.45 V/˚C. View Products & Descriptions

Contact Applications Group for more information


Silicon Planar Diffused

Planar Diffused Photodiodes

Planar Diffused photodiodes offer lower capacitance and higher risetimes compared to the Inversion Layer photodiodes. These devices also exhibit linearity of photocurrent up to higher light outputs. View Products & Descriptions  

Contact Applications Group for Datasheet

 

Silicon Planar Diffused IR Supressed

Planar Diffused IR Supressed Photodiodes

Planar Diffused photodiodes offer lower capacitance and higher risetimes compared to the Inversion Layer photodiodes. These devices also exhibit linearity of photocurrent up to higher light outputs. The IR sesitivty of these devices is supressed to minimize ambient light interference. View Products & Descriptions  

Contact Applications Group for datasheets