Standard Products > Silicon Photodiodes > General Purpose Photodiodes > Photovoltaic Devices

Photovoltaic Devices

Low Noise Planar Diffused Silicon Photodiodes

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The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable.

These detectors have high shunt resistance and low noise, and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low speed applications. For high light levels ( greater than 10mW/cm2), the Photoconductive Series detectors should be considered for better linearity.

These detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered.

Please refer to the Photovoltaic Mode (PV) paragraph in the application note "Photodiode Characteristics and Applications" located under Application Notes for detailed information on electronics set up.

Product Applications

Colorimeters
Photometers
Spectroscopy Equipment
Fluorescence

Product Features

Ultra Low Noise
High Shunt Resistance
Blue Enhanced
Wide Dynamic Range

Photovoltaic Series

Model Number	Active Area	Active Area Dimensions	Peak Wavelength	Responsivity	Shunt Resistance	Capacitance	Rise TIme	Package
CD-1705	0.88 mm²	.93 mm²	850 nm	0.60 A/W	10 GO	70 pF	2000 ns	71/Plastic
PIN-2DPI ‡	1.1 mm²	0.81 x 1.37 mm	970 nm	0.60 A/W	10 GO	150 pF	30 ns	4 /TO-18
PIN-125DPL	1.6 mm²	1.27 mm²	970 nm	0.60 A/W	10 GO	160 pF	30 ns	8 / TO-18
PIN-3CDP	3.2 mm²	1.27 x 2.54 mm	970 nm	0.60 A/W	5.0 GO	320 pF	50 ns	7 / TO-18
PIN-3CDPI	3.2 mm²	1.27 x 2.54 mm	970 nm	0.60 A/W	5.0 GO	320 pF	50 ns	4 / TO-18
PIN-5DP	5.1 mm²	2.54 F mm	970 nm	0.60 A/W	4 GO	500 pF	60 ns	5 / TO-5
PIN-5DPI	5.1 mm²	2.54 F mm	970 nm	0.60 A/W	4 GO	500 pF	60 ns	5 / TO-5
PIN-13DP	13 mm²	3.6 mm²	970 nm	0.60 A/W	3.5 GO	1200 pF	150 ns	5 / TO-5
PIN-13DPI	13 mm²	3.6 mm²	970 nm	0.60 A/W	3.5 GΩ	1200 pF	150 ns	5 / TO-5
PIN-6DP	16.4 mm²	4.57 F mm	970 nm	0.60 A/W	2 GO	2000 pF	220 ns	6 / TO-8
PIN-6DPI	16.4 mm²	4.57 F mm	970 nm	0.60 A/W	2 GO	2000 pF	220 ns	3 / TO-8
PIN-44DP	44 mm²	6.6 mm²	970 nm	0.60 A/W	1.0 GO	4300 pF	475 ns	6 / TO-8
PIN-44DPI	44 mm²	6.6 mm²	970 nm	0.60 A/W	1.0 GO	4300 pF	475 ns	3 / TO-8
PIN-10DP	100 mm²	11.28 F mm	970 nm	0.60 A/W	0.20 GO	9800 pF	1000 ns	11 / BNC
PIN-10DPI	100 mm²	11.28 F mm	970 nm	0.60 A/W	0.20 GO	9800 pF	1000 ns	10 / Lo-Prof
PIN-25DP	613 mm²	27.9 F mm	970 nm	0.60 A/W	0.1 GO	60000 pF	6600 ns	12 / BNC

Plastic Package

Model Number	Active Area	Active Area Dimensions	Peak Wavelength	Responsivity	Shunt Resistance	Capacitance	Rise Time	Package	Click Image to Zoom
PIN-220DP	200 mm²	10 x 20 mm	970 nm	0.60 A/W	0.25 GΩ	20000 pF	2200 ns	27 / Plastic

‡ The 'I' suffix on the model number is indicative of the photodiode chip being isolated from the the package by an additional pin connected to the case.