Planar Diffused IR Suppressed Photodiodes
UV Enhanced, IR Suppressed, Metal & Ceramic Packages
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum.
Planar diffused structure (UV-E Series) UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and faster response time. These devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They offer better stability with prolonged exposure to UV light.
There are two types of planar diffused UV enhanced photodiodes available: UVD and UVE. Both series have almost similar electro-optical characteristics, except in the UVE series, where the near IR responses of the devices are suppressed. This is especially desirable if blocking the near IR region of the spectrum is necessary. UVD devices peak at 970 nm and UVE devices at 720 nm (see graph). Both series may be biased for lower capacitance, faster response and wider dynamic range. Or they may be operated in the photovoltaic (unbiased) mode for applications requiring low drift with temperature variations. The UVE devices have a higher shunt resistance than their counterparts of UVD devices, but have a higher capacitance.