UV Enhanced Photodiodes

Generally sensitive between 200 to 1100nm these detectors are typically packaged with quartz or UV transmissive glass window. They exhibit low dark current and can be reverse biased for lower capacitance and faster rise time performance.

Silicon Inversion Layer

Inversion Layer Photodiodes

Inversion Layer Photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements.View Products & Descriptions

Silicon Planar Diffused

Planar Diffused Photodiodes

 Planar Diffused photodiodes offer lower capacitance and higher risetimes compared to the Inversion Layer photodiodes. These devices also exhibit linearity of photocurrent up to higher light outputs. View Products & Descriptions

Silicon Planar Diffused IR Supressed

Planar Diffused IR Supressed Photodiodes

Planar Diffused photodiodes offer lower capacitance and higher risetimes compared to the Inversion Layer photodiodes. These devices also exhibit linearity of photocurrent up to higher light outputs. The IR sesitivty of these devices is supressed to minimize ambient light interference. View Products & Descriptions