Avalanche Photodiode (APD)

Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Image Datasheet Model Number Active Area Diameter Active Area Gain Responsivity @ Gain M Dark Current @ Gain M Capacitance Bandwidth @ Gain M 800nm Breakdown Voltage Package View
PDF APD02-8-150-xxxx 0.2 mm 0.3 mm2 100 50 A/W 0.05 nA 1.5 pF 1000 MHz 150 V T-52 View
PDF APD05-8-150-xxxx 0.5 mm 0.19 mm2 100 50 A/W 0.1 nA 3 pF 900 MHz 150 V T-52 View
PDF APD10-8-150-xxxx 1 mm 0.78 mm2 100 50 A/W 0.2 nA 6 pF 600 MHz 150 V T-52 View
PDF APD15-8-150-xxxx 1.5 mm 1.77 mm2 100 50 A/W 0.5 nA 10 pF 350 MHz 150 V TO-5 View
PDF APD30-8-150-xxxx 3 mm 7 mm2 60 30 A/W 1 nA 40 pF 65 MHz 150 V TO-5 View
PDF APD50-8-150-xxxx 5 mm 19.6 mm2 40 20 A/W 3 nA 105 pF 25 MHz 150 V TO-8 View

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